TNSC MOCVD equipment division receiving the Industry Award

GaN and AlN devices has received the 2020 Industry Award from The Japan Society of Vacuum and Surface Science

Taiyo Nippon Sanso Corporation (“TNSC”) (President:Kenji Nagata) announces that its MOCVD equipment division for advanced GaN and AlN devices has received the 2020 Industry Award from The Japan Society of Vacuum and Surface Science.

This award is presented annually by The Japan Society of Vacuum and Surface Science to recognize significant contributions to the advancement and development of the surface and vacuum science-related industries.

＜Taiyo Nippon Sanso MOCVD Equipment Division>

TNSC has been developing MOCVD (Metal Organic Chemical Vapor Deposition) compound semiconductor production equipment since 1983, and has delivered more than 500 MOCVD equipment sets to manufacturers and research institutions in Japan and abroad.

In 2015, TNSC developed the SR4000HT reactor model for high Al content AlGaN ultraviolet (UV) light-emitting devices. The SR4000HT allows for AlGaN film deposition at a high temperature (greater than 1300 °C). Processes for UVLED epi-wafers with high luminous efficiency have demonstrated.

In 2012 TNSC introduced the UR26K reactor model, a large-scale mass production platform that can process 8-inch substrates. High performance mass production of GaN HEMTs on 8-inch Si substrates has been demonstrated. The UR series reactors optimize film properties and productivity by reducing the operating time and supporting cleaning technology for reactor components.

TNSC will continue will contribute to promote environmental and energy conservation initiatives in the industry by introducing new technologies and products.