Realization of Controlled n-Type Doping of β-Ga₂O₃ Homoepitaxial Layers via a Proprietary MOVPE
Key Technology for Mass-Production of Next-Generation Power Devices Tokyo, Japan – May 20, 2025 –A research group led by Prof. Yoshinao Kumagai of Tokyo University of Agriculture and Technology, in collaboration with Mr. Junya Yoshinaga of TAIYO NIPPON SANSO CORPORATION, Assistant Prof. Shogo Sasaki of Nara Women’s University, Prof. Takeyoshi Onuma of Kogakuin University, Prof. Masataka Higashiwaki of Osaka Metropolitan University / National Institute of Information and Communications Technology, and Dr. Yuzaburo Ban of TAIYO NIPPON SANSO ATI CORPORATION, has successfully developed a technique for precise control of n-type conductivity in high-speed growth of β-Ga₂O₃ homoepitaxial layers using their proprietary low-pressure hot-wall MOVPE method. β-Ga₂O₃ has been attracting attention as a […]