Tag: TAIYO NIPPON SANSO ATI
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Realization of Controlled n-Type Doping of β-Ga₂O₃ Homoepitaxial Layers via a Proprietary MOVPE
Key Technology for Mass-Production of Next-Generation Power Devices Tokyo, Japan – May 20, 2025 –A research group led by Prof. Yoshinao Kumagai of Tokyo University of Agriculture and Technology, in collaboration with Mr. Junya Yoshinaga of TAIYO NIPPON SANSO CORPORATION, Assistant Prof. Shogo Sasaki of Nara Women’s University, Prof. Takeyoshi Onuma of Kogakuin University, Prof. Masataka…